(China (Mainland))
Product Summary
The CY7C1019-12VXC is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE), an active LOW output enable (OE), and three-state drivers. The CY7C1019-12VXC has an automatic power-down feature that significantly reduces power consumption when deselected. Reading from the device is accomplished by taking chip enable (CE) and output enable (OE) LOW while forcing write enable (WE) HIGH. The CY7C1019-12VXC is available in standard 400-mil-wide SOJs.
Parametrics
CY7C1019-12VXC absolute maximum ratings: (1)Storage Temperature:–65℃ to +150℃; (2)Ambient Temperature with Power Applied:–55℃ to +125℃; (3)Supply Voltage on VCC to Relative GND:–0.5V to +7.0V; (4)DC Voltage Applied to Outputs in High Z State:–0.5V to VCC + 0.5V; (5)DC Input Voltage:–0.5V to VCC + 0.5V; (6)Current into Outputs (LOW):20mA; (7)Static Discharge Voltage: >2001V (per MIL-STD-883, Method 3015); (8)Latch-Up Current: >200mA.
Features
CY7C1019-12VXC features: (1)High speed: tAA = 10 ns ; (2)CMOS for optimum speed/power; (3)Center power/ground pinout; (4)Automatic power-down when deselected; (5)Easy memory expansion with CE and OE options.
Diagrams
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